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| MICROWAVE CORPORATION HMC262 V01.05.00 GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz FEBRUARY 2001 Features EXCELLENT NOISE FIGURE : 2 dB General Description The HMC262 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 15 to 24 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due 2 to its small (2.75 mm ) size. The chip utilizes a GaAs PHEMT process offering 25 dB gain from a single bias supply of + 3V @ 36 mA with a noise figure of 2 dB. This LNA can be used in microwave & millimeter wave point-to-point radios, VSAT, and other SATCOM applications. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). The HMC262 may be used in conjunction with HMC203, HMC258, HMC264, or HMC265 mixers to realize a microwave or millimeterwave system receiver. 1 AMPLIFIERS DIE STABLE GAIN VS TEMPERATURE: 25 dB 1.5 dB SINGLE SUPPLY : +3V@ 36mA SMALL SIZE: 1.32 mm x 2.08 mm Guaranteed Performance, Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Voltage (Vdd) Supply Current (Idd) (Vdd= +3V) 7 Vdd = +3V, -55 to +85 deg C Typ. Max. Min. Typ. Max. 15 - 17 17 - 20 19 5.0 4 5 37 1 4 9 3.25 48 2.75 25 2.0 10 12 42 4.5 8 13 3.0 36 3.25 48 35 0 2 6 2.75 3.7 6 15 Min. Typ. 20 - 24 20 2.2 12 6 40 4 6 10 3.0 36 3.25 48 3.9 Max. Units GHz dB dB dB dB dB dB m dB m dB m V dc mA Min. 19 24 2.8 5 16 45 3 8 13 3.0 36 39 -1 3 8 2.75 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 16 HMC262 MICROWAVE CORPORATION HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz V01.05.00 FEBRUARY 2001 Broadband Gain and Return Loss 30 GAIN 25 GAIN (dBm) 20 15 10 S11(Input) 5 S22(Output) 0 14 16 18 20 22 24 FREQUENCY (GHz) -30 -25 -5 0 Gain vs. Temperature 30 -55 C 25 GAIN (dB) -10 -15 -20 1 +85 C +25 C 15 10 14 16 18 20 22 24 FREQUENCY (GHz) Noise Figure 5 +85 C Input Return Loss 0 INPUT RETURN LOSS (dB) -5 -55 C -10 -15 -20 +85 C -25 +25 C -30 -35 4 NOISE FIGURE (dB) 3 2 1 +25 C 0 14 16 18 20 22 24 FREQUENCY (GHz) -55 C 14 16 18 20 22 24 FREQUENCY (GHz) Output Return Loss 0 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 -35 14 16 18 20 22 24 FREQUENCY (GHz) +85 C +25 C -55 C All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 17 DIE AMPLIFIERS RETURN LOSS (dB) 20 HMC262 MICROWAVE CORPORATION HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz FEBRUARY 2001 V01.05.00 Isolation 0 20 IP3 Output @ Vdd = +3V -55 C +25 C 15 1 ISOLATION (dB) -10 -20 -30 -40 5 -50 -60 14 16 18 20 22 24 0 14 AMPLIFIERS IP3 (dBm) 10 +85 C 16 18 20 22 24 DIE FREQUENCY (GHz) FREQUENCY (GHz) P1dB Output @ Vdd = +3V 10 8 -55C P1dB (dBm) 6 +25C 4 2 +85C 0 14 16 18 20 22 24 FREQUENCY (GHz) All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 18 HMC262 MICROWAVE CORPORATION HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz V01.05.00 FEBRUARY 2001 Schematic Vdd V1 V2 (+3V to +5V) V3 Absolute Maximum Ratings Supply Voltage (Vdd) (Vdd = V1 = V2 = V3) Input Power (RFin) (Vdd = +3V) +5.5 Vdc -5 dBm 175 C 90 C/W -65 to +150 C -55 to +85 C 1 AMPLIFIERS 1 - 19 RF IN RF OUT Channel Temperature (Tc) Thermal Resistance ( (Channel Backside) Storage Temperature j c) Ground (Backside) Operating Temperature Outline ( See Die Handling, Mounting, Bonding Note Page 1 - 13 ) RF IN RF OUT ALL DIMENSION IN MILLIMETERS (INCHES) ALL TOLERANCES ARE 0.025 (0.001) DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND BOND PADS ARE 0.100 (0.004) SQUARE BOND PAD SPACING, CTR-CTR: 0.150 (0.006) BACKSIDE METALLIZATION : GOLD BOND PAD METALLIZATION : GOLD 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com DIE NOTE: Connect V1, V2, & V3 to Vdd via a 100pF single layer chip bypass capacitor. Place the capacitor no further than 0.762 mm (30mils) from the HMC262. M1 & M2 are to remain open circuit (no connection). HMC262 MICROWAVE CORPORATION HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz FEBRUARY 2001 V01.05.00 MIC Assembly Techniques for HMC262 1 AMPLIFIERS DIE Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Figure 3: Typical HMC262 Assembly An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows a typical assembly for the HMC262 MMIC chip. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 20 HMC262 MICROWAVE CORPORATION HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz V01.05.00 FEBRUARY 2001 Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes ( see page 8 - 2 ). Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 1 AMPLIFIERS DIE Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 21 |
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